High-transparency Ni/Au ohmic contact to p-type GaN
نویسندگان
چکیده
In this study, a very thin Ni/Au bilayer metal film was prepared by electron beam evaporation and thermal alloying to form ohmic contact on p-type GaN film. After thermal alloying, the current– voltage (I – V) characteristic of Ni/Au contact on p-type GaN film exhibited ohmic behavior. The Ni/Au contacts showed a specific contact resistance of 1.7310 V cm at an alloying temperature of 450 °C. In addition, the light transmittance of the Ni/Au ~2 nm/6 nm! bilayer on p-type GaN was measured to be around 85% at 470 nm. These results suggest that a suitable metallization technology for the fabrication of light emitting devices can be achieved. © 1999 American Institute of Physics. @S0003-6951~99!00816-5#
منابع مشابه
InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts
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